| 发明名称 | Magnetoresistive element and method of manufacturing the same | ||
| 摘要 | According to one embodiment, a magnetoresistive element includes a first magnetic layer having a perpendicular and invariable magnetization, a first nonmagnetic insulating layer on the first magnetic layer, a second magnetic layer on the first nonmagnetic insulating layer, the second magnetic layer having a perpendicular and variable magnetization, a second nonmagnetic insulating layer on the second magnetic layer, and a nonmagnetic conductive layer on the second nonmagnetic insulating layer. The second nonmagnetic insulating layer includes a first metal oxide with a predetermined element. The first nonmagnetic insulating layer includes a second metal oxide. | ||
| 申请公布号 | US9385307(B2) | 申请公布日期 | 2016.07.05 |
| 申请号 | US201514643866 | 申请日期 | 2015.03.10 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Nishiyama Katsuya;Yamakawa Koji |
| 分类号 | H01L21/82;H01L43/10;H01L43/12;H01L43/08;H01L43/02 | 主分类号 | H01L21/82 |
| 代理机构 | Holtz, Holtz & Volek PC | 代理人 | Holtz, Holtz & Volek PC |
| 主权项 | 1. A magnetoresistive element comprising: a first magnetic layer; a first nonmagnetic insulating layer on the first magnetic layer; a second magnetic layer on the first nonmagnetic insulating layer; a second nonmagnetic insulating layer on the second magnetic layer; and a nonmagnetic conductive layer on the second nonmagnetic insulating layer, wherein the second nonmagnetic insulating layer includes a first metal oxide with a predetermined element which is one of Ar, Xe and Kr, and the first nonmagnetic insulating layer includes a second metal oxide. | ||
| 地址 | Tokyo JP | ||