Ferroelectric mechanical memory and method

摘要

A memory device comprising a base; a capacitor comprising a ferroelectric layer and at least two electrically conductive layers, the ferroelectric layer being located between the at least two electrically conductive layers; each of the at least two conductive layers being operatively connected to a current source; a cantilever attached to the base at first end and movable at a second end, the ferroelectric capacitor being mounted to the cantilever such that the second end of the cantilever moves a predetermined displacement upon application of a current to the ferroelectric layer which induces deformation of the ferroelectric layer thereby causing displacement of the cantilever which is operatively associated with a contact so that an electrical connection is enabled with the contact upon the predetermined displacement of the cantilever. The presence or absence of a connection forms two states of a memory cell.

主权项

1. A nonvolatile memory device comprising:
a base; two electrically conductive layers adapted to be connected to a voltage source by input and output terminals; a ferroelectric layer positioned between the two conductive layers; the ferroelectric layer comprising a fixed portion operatively connected to the base and a movable portion; a resilient layer operatively associated with the ferroelectric layer for supporting the ferroelectric layer; the movable portion being displaced a predetermined distance from a first position to a second position upon application of a positive or negative voltage between the two conductive layers; a first contact operatively connectable to one of the two conductive layers; the application of one of a positive or negative voltage from the voltage source causing movement of the movable portion from the first to the second position resulting in operative electrical connection between one of the two conductive layers and the first contact and a sensor through another terminal operatively connected to the first contact to sense opening and closing of the operative electrical connection to the first contact; the ferroelectric layer being configured to retain a first state if the positive voltage is applied and a second state if negative voltage is applied; wherein once the ferroelectric is configured into one of the first or second state, upon application of a subsequent voltage, the opening and closing of the operative electrical connection to the first contact by the displacement of the ferroelectric layer operates as a read operation of the nonvolatile memory device.