发明名称 CASCODE AMPLIFIER SEGMENTATION FOR ENHANCED THERMAL RUGGEDNESS
摘要 PROBLEM TO BE SOLVED: To provide a power amplifier including RF power array elements of a cascode amplifier structure, where the RF power array elements reduces the likelihood of damage to one or more common base transistors during a thermal run-away event.SOLUTION: A power amplifier 100 includes a plurality of pairs of transistors, each pair of transistors including a common emitter transistor 110, 110' and a common base transistor 112, 112' arranged in a cascode configuration. The power amplifier further includes electrical connections implemented to connect the plurality of pairs in a parallel configuration between an input node and an output node. The electrical connections are configured to distribute a collector current to all of the common base transistors.SELECTED DRAWING: Figure 8
申请公布号 JP2016149742(A) 申请公布日期 2016.08.18
申请号 JP20150189592 申请日期 2015.09.28
申请人 SKYWORKS SOLUTIONS INC 发明人 PHILIP JOHN LEHTOLA
分类号 H03F3/24;H03F3/213;H03F3/68 主分类号 H03F3/24
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