| 发明名称 | Current constriction for spin torque MRAM | ||
| 摘要 | Magnetoresistive random access memory (MRAM) devices and methods for making the same include growing a tunnel barrier layer on a first magnetic layer. A thin layer of non-wetting material is formed on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer. A second magnetic layer is grown on the tunnel barrier layer. | ||
| 申请公布号 | US9466785(B1) | 申请公布日期 | 2016.10.11 |
| 申请号 | US201514814129 | 申请日期 | 2015.07.30 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Hu Guohan;Worledge Daniel C. |
| 分类号 | H01L43/12;H01L43/02;H01L43/08 | 主分类号 | H01L43/12 |
| 代理机构 | Tutunjian & Bitetto, P.C. | 代理人 | Tutunjian & Bitetto, P.C. ;Alexanian Vazken |
| 主权项 | 1. A method of forming a magnetoresistive random access memory (MRAM) device, comprising: growing a tunnel barrier layer on a first magnetic layer; growing a thin layer of non-wetting material on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer; and growing a second magnetic layer on the tunnel barrier layer. | ||
| 地址 | Armonk NY US | ||