发明名称 VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
摘要 A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature, and the second temperature.
申请公布号 US2016340800(A1) 申请公布日期 2016.11.24
申请号 US201615156888 申请日期 2016.05.17
申请人 NuFlare Technology, Inc. 发明人 ITO Hideki;SATO Yuusuke
分类号 C30B25/16;C30B25/10 主分类号 C30B25/16
代理机构 代理人
主权项 1. A vapor phase growth apparatus comprising: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature, and the second temperature.
地址 Kanagawa JP