发明名称 |
VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD |
摘要 |
A vapor phase growth apparatus includes: a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature, and the second temperature. |
申请公布号 |
US2016340800(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
US201615156888 |
申请日期 |
2016.05.17 |
申请人 |
NuFlare Technology, Inc. |
发明人 |
ITO Hideki;SATO Yuusuke |
分类号 |
C30B25/16;C30B25/10 |
主分类号 |
C30B25/16 |
代理机构 |
|
代理人 |
|
主权项 |
1. A vapor phase growth apparatus comprising:
a first supporter supporting a first substrate; a first heater heating the first substrate; a first gas feeder supplying a first process gas onto a surface of the first substrate; a first radiation thermometer measuring a first temperature on the surface of the first substrate, the first temperature taking no account of an effect of emissivity of the first substrate; a first thermometer acquiring an actual temperature of the first substrate; a first temperature controller controlling the actual temperature to be a predetermined temperature by using the first heater; a second supporter supporting a second substrate; a second heater heating the second substrate; a second radiation thermometer measuring a second temperature on a surface of the second substrate, the second temperature taking no account of an effect of emissivity of the second substrate; and a second temperature controller controlling the second heater based on the first temperature, the actual temperature, and the second temperature. |
地址 |
Kanagawa JP |