Electronic semiconductor power device with polycrystalline silicon components

摘要

The device comprises a chip of semiconductor material (10), a plate (14) of insulating material on the chip, a conducting strip of doped semiconductor material which has a portion (15) which extends over the plate (14), a portion (16) of a layer of semiconductor material which extends over the plate (14) and contains active regions and a metallic element (17) which is in contact with the portion (15) of conducting strip which extends over the plate (14) and has an area (20) designed to be used for electrical connection to a terminal, outside the chip, of the electronic device. To increase the useful area of the chip, the metallic element (17) extends in large part over the portion (16) of the layer of semiconductor material containing active regions, and is separated from this portion (16) by a layer of insulating material.