发明名称 |
INTER-METAL DIELECTRIC LAYER STRUCTURE AND ITS FORMING METHOD |
摘要 |
An inter-metal dielectric (IMD) layer structure and its forming method are disclosed. The IMD layer structure is formed between a first conducting layer and a second conducting layer and includes a first dielectric layer overlying the first conducting layer, a glass layer overlying the first dielectric layer, an etching stop layer overlying the glass layer, and a second dielectric layer overlying the etching stop layer under the second conducting layer. The etching rate of the etching stop layer is relatively low so that it can prevent the glass layer etched out. Therefore, a long-time etching can be used to obtain a better through hole profile.
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申请公布号 |
US2001042903(A1) |
申请公布日期 |
2001.11.22 |
申请号 |
US19990304386 |
申请日期 |
1999.05.04 |
申请人 |
LIN CHI-FA;TSENG WEI-TSU;FENG MIN-SHINN |
发明人 |
LIN CHI-FA;TSENG WEI-TSU;FENG MIN-SHINN |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/469;H01L21/31;H01L23/58 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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