摘要 |
A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H<SUB>2</SUB>O, wherein the dry-etching includes etching the sacrificial layer and removing H<SUB>2</SUB>O as one of the reaction products generated through the etching step of the sacrificial layer, wherein the etching and the removing of H<SUB>2</SUB>O are repetitively performed.
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