发明名称 |
METHOD OF THE ADJUSTABLE MATCHING MAP SYSTEM IN LITHOGRAPHY |
摘要 |
A method is provided for improving layer to layer overlay of a second layer pattern on a first layer pattern formed in a substrate. A plurality of first reference marks is placed inside a pattern area on a first layer mask which is used to form the first layer pattern. A plurality of second reference marks is placed on a second layer mask which is used to form the second layer pattern and in which one second reference mark is matched with a first reference mark having the same (x,y) coordinates. Reference mark placement in the resulting first and second layer patterns is determined by metrology to determine an x-deviation and a y-deviation for each matched pair of reference marks. A correction algorithm is then used to calculate adjustments in exposure tool settings for improved overlay of the second layer pattern on the first layer pattern in subsequent exposures.
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申请公布号 |
US2007099091(A1) |
申请公布日期 |
2007.05.03 |
申请号 |
US20060563852 |
申请日期 |
2006.11.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
TSAI FEI-GWO |
分类号 |
G03F1/00;G03C5/00;G03F7/00;G03F7/20;G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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