发明名称 Plasma processing method for forming a film and an electronic component manufactured by the method
摘要 A plasma processing method for forming a film on a substrate using a gas processed by a plasma. The plasma processing method for forming a film includes the steps of forming a CF film on the substrate by using a CaFb gas (here, a is a counting number, and b is a counting number which satisfies an equation of "b=2xa.2"), processing the CF film with the gas processed by the plasma, and forming an insulating film on the CF film processed by using an insulating material processed with the plasma.
申请公布号 US2009026588(A1) 申请公布日期 2009.01.29
申请号 US20070005683 申请日期 2007.12.28
申请人 TOKYO ELECTRON LIMITED 发明人 MIYATANI KOTARO;KAWAMURA KOHEI;NOZAWA TOSHIHISA;MATSUOKA TAKAAKI
分类号 H01L23/58;H01L21/31 主分类号 H01L23/58
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