LIGHT EXPOSURE METHOD, AND LIGHT EXPOSURE APPARATUS

摘要

There is provided an EUV exposure apparatus which restrains its optical systems or a mask used therein from being polluted by contaminations generated in its chamber. An energy beam generating source is arranged near a wafer stage set in the chamber of the EUV exposure apparatus to decompose an emission gas generated from a resist painted on the front surface of a wafer by an energy beam. In this manner, lightening mirrors configuring a lightening optical system as one of the optical systems, projection mirrors configuring a projection optical system as another of the optical systems, the mask, and others are protected from being polluted by contaminations.

主权项

1. A light exposure method, the method comprising:
scanning an exposure-receiving object with extreme ultraviolet (EUV) light projected from a mask on which a predetermined pattern is formed, the exposure-receiving object having a surface on which a resist is painted; shifting or stepping the exposure-receiving object; and radiating an energy beam into an optical path space thereby decomposing an emission gas from the resist, wherein the optical path space is located between the exposure-receiving object and an aperture through which the EUV ray passes from the mask, wherein, during the shifting or stepping, the exposure-receiving object is not scanned by the EUV light, wherein the energy beam is radiated into the optical space only during the shifting or stepping of the exposure-receiving object.