| 摘要 |
PROBLEM TO BE SOLVED: To provide a copper chemical mechanical polishing (CMP) formulation, method and system for CMP of copper on a semiconductor material, which allows low dishing and high removal rates.SOLUTION: The CMP formulation comprises particulate materials, and at least two or more amino acids with an appropriate mass concentration ratio, comprises an oxidizer, a corrosion inhibitor, water and a surfactant, and comprises at least one selected from the group consisting of a pH adjusting agent, a biocide, a dispersing agent, and a wetting agent. Here, pH is from 2 to 12.SELECTED DRAWING: None |
