发明名称 |
a-WO3-gate ISFET devices and method of making the same |
摘要 |
Disclosed is an ISFET comprising a H+-sensing membrane consisting of RF-sputtering a-WO3. The a-WO3/SiO2-gate ISFET of the present invention is very sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
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申请公布号 |
US2002109161(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
US20010989542 |
申请日期 |
2001.11.21 |
申请人 |
NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY |
发明人 |
CHOU JUNG CHUAN;CHIANG JUNG LUNG |
分类号 |
G01N27/414;(IPC1-7):H01L23/58 |
主分类号 |
G01N27/414 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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