发明名称 |
Manufacturing method for strained silicon wafer |
摘要 |
A method for manufacturing a strained silicon wafer, having steps of a first step of preparing a single crystal silicon substrate, a second step of forming a graded SiGe layer on the substrate, the graded SiGe layer having a first Ge composition ratio increased stepwisely from 5 to 60% at atomic ratio, a third step of forming a SiGe constant composition layer on the graded SiGe layer, the SiGe constant composition layer having a Ge composition ratio substantially equal to the Ge composition ratio on a surface of the-graded SiGe layer and a fourth step of forming a strained Si layer on the SiGe constant composition layer. The second through fourth steps are performed under the reduced pressure atmosphere while the single crystal silicon substrate is rotated in a circumferential direction at a rate from 300 rpm to 1500 rpm.
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申请公布号 |
US2005170664(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050038180 |
申请日期 |
2005.01.21 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
KURITA HISATSUGU;IGARASHI MASATO;SENDA TAKESHI;IZUNOME KOJI |
分类号 |
C30B25/18;C30B29/06;C30B29/52;(IPC1-7):C30B1/00 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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地址 |
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