发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form a ferroelectric capacitor which shows excellent electric characteristics. SOLUTION: When a lower electrode, first, second, and third ferroelectric films, and an upper electrode are formed in order (steps S1 to S5), the first and third ferroelectric films are formed thinner than the second ferroelectric film by adding predetermined elements, and the second ferroelectric film is formed without adding such elements. Consequently, while a decrease in switching charge amount of the ferroelectric capacitor resulting from the element addition is suppressed, fatigue characteristics and imprinting characteristics thereof can be improved and a leak current is reduced. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004679(A) 申请公布日期 2009.01.08
申请号 JP20070166065 申请日期 2007.06.25
申请人 FUJITSU MICROELECTRONICS LTD 发明人 O FUMIO
分类号 H01L21/8246;H01L27/105 主分类号 H01L21/8246
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