发明名称 SURFACE TREATMENT APPARATUS AND SURFACE TREATMENT METHOD OF WAFER
摘要 PROBLEM TO BE SOLVED: To provide an ashing device of simple configuration for treating the front and back surfaces of a wafer simultaneously, while ensuring heat transmission from a susceptor to the wafer, when ashing the wafer where one side and the other side are in the relationship of front and back.SOLUTION: A wafer 100 having one side 101 and the other side 102 in the relationship of front and rear, and warping to be convex on the one side 101 is used. A susceptor 20 having a mounting surface 21 for mounting the wafer 100 is included, and in a state where the wafer 100 is mounted on the susceptor 20 so that the other side 102 faces the mounting surface 21, and while adjusting the temperature of the wafer 100 by conductive heat from the susceptor 20, ashing is performed by bringing a gas medium into contact with one side 101 of the wafer 100. In a projection region 21a of the wafer out of the mounting surface 21, a groove 22 is formed to extend from the projection region to the outside of the outline of the wafer 100, so that the gas medium enters the other side 102 of the wafer 100 via the groove 22.SELECTED DRAWING: Figure 1
申请公布号 JP2016131181(A) 申请公布日期 2016.07.21
申请号 JP20150004133 申请日期 2015.01.13
申请人 DENSO CORP 发明人 INOUE SHINGO;MIYASHITA KOICHI
分类号 H01L21/3065;H01L21/683 主分类号 H01L21/3065
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