| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor of less off-state current.SOLUTION: A semiconductor device comprises a first transistor and a second transistor on the first transistor. The first transistor has: a channel formation region, a high-concentration impurity region and a low-concentration impurity region which are provided on a semiconductor substrate; a first gate insulation film which contacts the semiconductor substrate; an interlayer insulation film; and a first gate electrode on the first gate insulation film. The second transistor has: an oxide semiconductor layer; a source electrode, a drain electrode and a second gate insulation film which are provided on the oxide semiconductor layer; and a second gate electrode on the second gate insulation film. A top face of the interlayer insulation film is flat and has the oxide semiconductor layer on a top face thereof, and has an electrode which contacts a surface of the first gate electrode and electrically connected to the second gate electrode.SELECTED DRAWING: Figure 3 |
