SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

Provided are a semiconductor device including a stable dummy pattern, and a manufacturing method thereof. The semiconductor device comprises: a first dummy gate having a first width; a second dummy gate having a second width to be adjacent to the first dummy gate in a longitudinal direction; and at least one bridge to connect the first and second dummy gates, wherein the widths of the first and second widths are narrower than the width of a minimum processing line.