| 摘要 |
PROBLEM TO BE SOLVED: To lessen the impact due to particles remaining on a lateral face of a nitride semiconductor element at the time of dicing.SOLUTION: In a nitride semiconductor element having a sapphire substrate with a c-face serving as a principal surface and a nitride semiconductor part which is formed on the principal surface of the sapphire substrate and includes a single or a plurality of nitride semiconductor layers represented as AlGaInN(x+y+z=v=1, 0≤x≤1, 0≤y≤1, 0≤z≤1), the nitride semiconductor part and the sapphire substrate have two faces (f1, f3) cut on a face parallel with an m-face of the nitride semiconductor layer, and two faces (f2, F4) cut on a face parallel with an a-face of the nitride semiconductor layer as lateral faces.SELECTED DRAWING: Figure 2 |
