发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT AND DEVICE USING THE SAME, AND NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which further inhibits alteration or deterioration of a nitride semiconductor element to achieve high reliability.SOLUTION: A nitride semiconductor element 1 comprises a sapphire substrate 10 and a nitride semiconductor part 20 which is formed on the sapphire substrate 10 and has a mesa part 21. The nitride semiconductor part 20 has a lateral face 22 composed of a cross section formed due to dicing to chips and the lateral face 22 is covered with an inorganic material 30 having a composition different from that of the nitride semiconductor part 20.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016149527(A) |
申请公布日期 |
2016.08.18 |
申请号 |
JP20150237733 |
申请日期 |
2015.12.04 |
申请人 |
ASAHI KASEI CORP |
发明人 |
SATO KOSUKE |
分类号 |
H01L33/44;H01L21/316;H01L33/32 |
主分类号 |
H01L33/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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