发明名称 NITRIDE SEMICONDUCTOR ELEMENT AND DEVICE USING THE SAME, AND NITRIDE SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor element which further inhibits alteration or deterioration of a nitride semiconductor element to achieve high reliability.SOLUTION: A nitride semiconductor element 1 comprises a sapphire substrate 10 and a nitride semiconductor part 20 which is formed on the sapphire substrate 10 and has a mesa part 21. The nitride semiconductor part 20 has a lateral face 22 composed of a cross section formed due to dicing to chips and the lateral face 22 is covered with an inorganic material 30 having a composition different from that of the nitride semiconductor part 20.SELECTED DRAWING: Figure 1
申请公布号 JP2016149527(A) 申请公布日期 2016.08.18
申请号 JP20150237733 申请日期 2015.12.04
申请人 ASAHI KASEI CORP 发明人 SATO KOSUKE
分类号 H01L33/44;H01L21/316;H01L33/32 主分类号 H01L33/44
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