发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND PHOSPHOR LAYER FORMATION METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device having excellent heat dissipation property; and provide a phosphor layer formation method.SOLUTION: According to an embodiment, a semiconductor light emitting device comprises: a light emitting element; and a phosphor layer which is provided on the light emitting element and has a plurality of phosphor particles and a plurality of inorganic particles of size smaller than the phosphor particles, which cohere among the plurality of phosphor particles to bind the plurality of phosphor particles with each other.SELECTED DRAWING: Figure 1
申请公布号 JP2016149389(A) 申请公布日期 2016.08.18
申请号 JP20150024066 申请日期 2015.02.10
申请人 TOSHIBA CORP 发明人 FURUYAMA HIDETO;ENDO MITSUYOSHI;SHIMOJUKU YUKI;ITONAGA SHUJI;NOMURA YUKIHIRO
分类号 H01L33/50;C09K11/08 主分类号 H01L33/50
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