WET ETCHING PROCESS FOR SELF-ASSEMBLED PATTERN OF BLOCK COPOLYMER

摘要

The present invention relates to a process for selectively removing a block on one side by using a wet etching process, in a self-assembled block copolymer thin film having etching-resisting properties different from each other. According to the present invention, the present invention can form a vertical nanopore structure having a high aspect ratio, even in the case of a thick film which has a vertically oriented cylinder self-assembly structure and has one or more periods, by overcoming the limit of conventional technology, which can not implement a vertical pore structure through wet etching.