| 摘要 |
In one example in accordance with the present disclosure a method of determining a resistance state of a memristor in a crossbar array is disclosed. In the method, a combined reference-sneak current is determined based on a reference voltage, a sense voltage, a non-access voltage, and a voltage applied to a target row line. Also in the method a combined read-sneak current is determined based on a read voltage, a sense voltage, a non-access voltage, and a voltage applied to a reference row line. A resistance state of a target memristor is determined based on the combined reference-sneak current and the combined read-sneak current. |
