发明名称 MASK BLANK AND MAKING METHOD
摘要 In a mask blank comprising a transparent substrate and a single layer or multilayer film formed thereon, the film is formed only on the front surface of the substrate, but not on the side surface, chamfer, front surface-chamfer boundary, and back surface-chamfer boundary. The mask blank contains few particle defects, especially the number of particle defects with a certain size is zero.
申请公布号 US2016266485(A1) 申请公布日期 2016.09.15
申请号 US201615068047 申请日期 2016.03.11
申请人 Shin-Etsu Chemical Co., Ltd. 发明人 INAZUKI Yukio;KANEKO Hideo
分类号 G03F1/50 主分类号 G03F1/50
代理机构 代理人
主权项 1. A mask blank comprising a substrate which is transparent to exposure light, the substrate having a front surface, back surface, side surface, and chamfer, and a film formed on the substrate and consisting of a single layer or plural layers, the single layer or each of plural layers being selected from an optical functional film and a processing aid film, wherein the film is formed only on the front surface of the substrate, but not on the side surface, the chamfer, the boundary between the front surface and the chamfer, and the boundary between the back surface and the chamfer.
地址 Tokyo JP