发明名称 |
MASK SET, FABRICATION METHOD OF MASK SET, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM |
摘要 |
According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern. |
申请公布号 |
US2016266484(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201514747295 |
申请日期 |
2015.06.23 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Furubayashi Ai;Obara Takashi;Hashimoto Takaki;Komine Nobuhiro |
分类号 |
G03F1/42;G06F17/50;G03F1/84;G03F7/20;G03F7/32 |
主分类号 |
G03F1/42 |
代理机构 |
|
代理人 |
|
主权项 |
1. A mask set, comprising:
a first mask including a first device pattern and a first mark pattern, the first mark pattern being used for an inspection of a position of the first device pattern on a surface of the first mask; and a second mask that is used to perform multiple exposure on a substrate together with the first mask, and includes a second device pattern and a second mark pattern, the second mark pattern being used for an inspection of a position of the second device pattern on a surface of the second mask, the second mark pattern including a pattern corresponding to a pattern obtained by inverting the first mark pattern. |
地址 |
Minato-ku JP |