发明名称 MASK SET, FABRICATION METHOD OF MASK SET, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
摘要 According to one embodiment, there is provided a mask set including a first mask and a second mask. The first mask includes a first device pattern and a first mark pattern. The first mark pattern is used for an inspection of a position of the first device pattern on a surface of the first mask. The second mask is used to perform multiple exposure on a substrate together with the first mask. The second mask includes a second device pattern and a second mark pattern. The second mark pattern is used for an inspection of a position of the second device pattern on a surface of the second mask. The second mark pattern includes a pattern corresponding to a pattern obtained by inverting the first mark pattern.
申请公布号 US2016266484(A1) 申请公布日期 2016.09.15
申请号 US201514747295 申请日期 2015.06.23
申请人 Kabushiki Kaisha Toshiba 发明人 Furubayashi Ai;Obara Takashi;Hashimoto Takaki;Komine Nobuhiro
分类号 G03F1/42;G06F17/50;G03F1/84;G03F7/20;G03F7/32 主分类号 G03F1/42
代理机构 代理人
主权项 1. A mask set, comprising: a first mask including a first device pattern and a first mark pattern, the first mark pattern being used for an inspection of a position of the first device pattern on a surface of the first mask; and a second mask that is used to perform multiple exposure on a substrate together with the first mask, and includes a second device pattern and a second mark pattern, the second mark pattern being used for an inspection of a position of the second device pattern on a surface of the second mask, the second mark pattern including a pattern corresponding to a pattern obtained by inverting the first mark pattern.
地址 Minato-ku JP