发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 In order to provide a semiconductor device with high reliability while manufacturing cost is being suppressed, dry etching for an insulating film is performed by using mixed gas containing at least CF 4 gas and C 3 H 2 F 4 gas as its components.
申请公布号 EP3070736(A1) 申请公布日期 2016.09.21
申请号 EP20160150400 申请日期 2016.01.07
申请人 RENESAS ELECTRONICS CORPORATION 发明人 HORIKOSHI, KOTARO;HANAWA, TOSHIKAZU;AKAISHI, MASATOSHI;KIKUCHI, YUJI
分类号 H01L21/311 主分类号 H01L21/311
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