| 发明名称 |
DUAL TRANSISTORS FABRICATED ON LEAD FRAMES AND METHOD OF FABRICATION |
| 摘要 |
A dual transistor device includes a first transistor having a first drain, a first gate, and first source and a second transistor having a second drain, a second gate, and a second source. A first terminal is substantially flat and has a first surface. The first source is located adjacent a first portion of the first surface and is electrically coupled to the first terminal. The second drain is located adjacent a second portion of the first surface and is electrically coupled to the first terminal. |
| 申请公布号 |
US2016315036(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201514695333 |
申请日期 |
2015.04.24 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Shibuya Makoto;Okamoto Dan |
| 分类号 |
H01L23/495;H01L25/00;H01L29/66;H01L25/07;H01L29/45;H01L29/78 |
主分类号 |
H01L23/495 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A dual transistor device comprising:
a first transistor having a first drain, a first gate, and first source; a second transistor having a second drain, a second gate, and a second source; a first terminal, the first terminal being substantially flat and having a first surface; wherein the first source is located adjacent a first portion of the first surface and is electrically coupled to the first terminal; and wherein the second drain is located adjacent a second portion of the first surface and is electrically coupled to the first terminal. |
| 地址 |
Dallas TX US |
