WAFER PROCESSING METHOD

摘要

Disclosed herein is a wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines. The wafer is composed of a substrate and a functional layer formed on the front side of the substrate. The division lines are formed on the front side of the functional layer. A laser beam having a transmission wavelength to the substrate is applied to the wafer from the back side thereof to detect the height of an interface between the functional layer and the substrate in an area corresponding to each division line. The depth of cut by a cutting blade for cutting the substrate is next set according to the height detected above. The back side of the substrate is next cut by the cutting blade according to the depth of cut set above to thereby form a cut groove having a depth not reaching the functional layer with a remaining part of the substrate left between the bottom of the cut groove and the functional layer along each division line, the remaining part having a uniform thickness. Thereafter, the remaining part and the functional layer are cut along each division line to thereby divide the wafer.

主权项

1. A wafer processing method for dividing a wafer into a plurality of individual devices along a plurality of crossing division lines, said wafer being composed of a substrate and a functional layer formed on a front side of said substrate, said division lines being formed on a front side of said functional layer to thereby define a plurality of separate regions where said devices are respectively formed, said wafer processing method comprising:
a protective member attaching step of attaching a protective member to the front side of said functional layer of said wafer; a height recording step of holding said wafer on a chuck table in a condition where said protective member is in contact with said chuck table after performing said protective member attaching step, applying a laser beam having a transmission wavelength to said substrate from a back side of said wafer held on said chuck table to detect the height of an interface between said functional layer and said substrate in a Z direction in an area corresponding to each division line as relatively moving said chuck table and said laser beam in an X direction, and recording an X coordinate on each division line and a Z coordinate corresponding to said X coordinate and said height detected; a cut groove forming step of positioning a cutting blade on the back side of said substrate of said wafer in the area corresponding to each division line after performing said height recording step and next relatively moving said chuck table and said cutting blade in said X direction to thereby form a cut groove having a depth not reaching said functional layer with a remaining part of said substrate left between the bottom of said cut groove and said functional layer; and a dividing step of dividing said remaining part and said functional layer along said cut groove extending along each division line after performing said cut groove forming step; said cut groove forming step including the step of moving said cutting blade in said Z direction according to said X coordinate and said Z coordinate recorded in said height recording step to thereby make the thickness of said remaining part uniform in said X direction.