发明名称 METHOD AND DEVICE FOR CUTTING WAFERS
摘要 A method is described of radiatively cutting a wafer, the method comprising the steps of low power cutting of two trenches followed by high power cutting of a fissure. A single pulsed radiation beam is split into a first pulsed radiation beam for cutting at least one of the trenches and a second pulsed radiation beam for cutting the fissure. When cutting a fissure on the wafer in a cutting direction along a cutting street, the first and second radiation beams are directed simultaneously with the first radiation beam leading and the second radiation beam trailing. For cutting a fissure in the opposite cutting direction, a third pulsed radiation beam for trenching is split from said single pulsed radiation beam.
申请公布号 US2016315010(A1) 申请公布日期 2016.10.27
申请号 US201615095520 申请日期 2016.04.11
申请人 ASM Technology Singapore Pte Ltd 发明人 VAN DER STAM Karel Maykel Richard
分类号 H01L21/78;B23K26/082;H01L21/67;B23K26/402;H01L21/268;B23K26/067;B23K26/364 主分类号 H01L21/78
代理机构 代理人
主权项 1. Method of radiatively cutting a wafer, the method comprising two cutting actions of low power cutting of two trenches followed by a high power cutting of a fissure between the two trenches, wherein a single pulsed radiation beam is split into at least two pulsed radiation beams for performing at least two of said cutting actions simultaneously in one pass.
地址 Singapore SG