发明名称 |
METHOD AND DEVICE FOR CUTTING WAFERS |
摘要 |
A method is described of radiatively cutting a wafer, the method comprising the steps of low power cutting of two trenches followed by high power cutting of a fissure. A single pulsed radiation beam is split into a first pulsed radiation beam for cutting at least one of the trenches and a second pulsed radiation beam for cutting the fissure. When cutting a fissure on the wafer in a cutting direction along a cutting street, the first and second radiation beams are directed simultaneously with the first radiation beam leading and the second radiation beam trailing. For cutting a fissure in the opposite cutting direction, a third pulsed radiation beam for trenching is split from said single pulsed radiation beam. |
申请公布号 |
US2016315010(A1) |
申请公布日期 |
2016.10.27 |
申请号 |
US201615095520 |
申请日期 |
2016.04.11 |
申请人 |
ASM Technology Singapore Pte Ltd |
发明人 |
VAN DER STAM Karel Maykel Richard |
分类号 |
H01L21/78;B23K26/082;H01L21/67;B23K26/402;H01L21/268;B23K26/067;B23K26/364 |
主分类号 |
H01L21/78 |
代理机构 |
|
代理人 |
|
主权项 |
1. Method of radiatively cutting a wafer, the method comprising two cutting actions of low power cutting of two trenches followed by a high power cutting of a fissure between the two trenches, wherein a single pulsed radiation beam is split into at least two pulsed radiation beams for performing at least two of said cutting actions simultaneously in one pass. |
地址 |
Singapore SG |