| 发明名称 |
METHOD FOR PATTERNING MESOPOROUS INORGANIC OXIDE FILM, AND ELECTRIC DEVICE INCLUDING MESOPOROUS INORGANIC OXIDE FILM PATTERNED BY THE SAME |
| 摘要 |
Provided are a method for patterning a mesoporous inorganic oxide film, the method including a step of forming a mesoporous inorganic oxide film using a composition containing inorganic oxide particles; and a step of forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide, and an electronic device including a mesoporous inorganic oxide film that has been patterned by the patterning method. |
| 申请公布号 |
US2016315006(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615197714 |
申请日期 |
2016.06.29 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University |
发明人 |
KIM EUN KYOUNG;KIM JONG HAK;KIM JEONG HUN;KOH JONG KWAN;NA JONG BEOM;PARK CHI HYUN |
| 分类号 |
H01L21/768;H01L21/02 |
主分类号 |
H01L21/768 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for patterning a mesoporous inorganic oxide film, the method comprising:
forming a mesoporous inorganic oxide film using a neutral composition containing inorganic oxide particles; and forming a pattern on the mesoporous inorganic oxide film using an elastic stamp for pattern formation, and then calcining the mesoporous inorganic oxide film. |
| 地址 |
Seoul KR |
