发明名称 HIGH CONDUCTIVITY BURIED LAYER IN OPTICAL WAVEGUIDE
摘要 An optical device (300) comprises a multilayer structure, formed by wafer bonding, incorporating in sequence a silicon dioxide layer (304), a buried silicide layer (306), a contact layer (308) and a silicon surface layer (310). The surface layer (310) is selectively etched to form an exposed rib (312). An upper surface of the rib (312) is doped to form an elongate electrode (314) therealong. The surface layer (310) is selectively etched to the contact layer (308) in regions remote from the rib (312) to form via channels (316a, 316b) for making electrical connection to the contact layer (308). The rib (312) forms a waveguide along which radiation propagates. When the electrode (314) is biased relative to the contact layer (308), charge carriers are injected into the rib (312) and induce refractive index changes in a central region (324) thereof where most of the radiation propagates along the rib (312). The silicide layer (306) provides an efficient current conduction path for injecting the carriers, thereby providing enhanced device operating bandwidth and reduced power dissipation.
申请公布号 WO9843128(A1) 申请公布日期 1998.10.01
申请号 WO1998GB00585 申请日期 1998.02.24
申请人 THE SECRETARY OF STATE FOR DEFENCE;BOZEAT, ROBERT, JOHN;NAYAR, VISHAL 发明人 BOZEAT, ROBERT, JOHN;NAYAR, VISHAL
分类号 G02F1/025;(IPC1-7):G02F1/025;G02F1/313 主分类号 G02F1/025
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