发明名称 |
Diffusion topography engineering for high performance CMOS fabrication |
摘要 |
Semiconductor structures are formed using diffusion topography engineering (DTE). A preferred method includes providing a semiconductor substrate, forming trench isolation regions that define a diffusion region, performing a DTE in a hydrogen-containing ambient on the semiconductor substrate, and forming a MOS device in the diffusion region. The DTE causes silicon migration, forming a rounded or a T-shaped surface of the diffusion regions. The method may further include recessing a portion of the diffusion region before performing the DTE. The diffusion region has a slanted surface after performing the DTE.
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申请公布号 |
US2007215936(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060378907 |
申请日期 |
2006.03.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KO CHIH-HSIN;LEE WEN-CHIN;KE CHUNG-HU;CHEN HUNG-WEI |
分类号 |
H01L29/76;H01L29/94;H01L31/00 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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