| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for cleaning a phosphor by which an excessive compound of a group VI metal on the surface of the phosphor is removed to afford the phosphor of high quantum efficiency. SOLUTION: The method for treating the phosphor comprises etching the phosphor composed of a II-VI compound semiconductor as a principal component with an acid and then cleaning the phosphor with a chelating agent or a chelating agent solution. In the method for treatment, the chelating agent preferably contains hydroxy group and nitrogen atom; the chelating agent containing the hydroxy group and nitrogen atom is preferably 8-quinolinol and the chelating agent solution preferably contains at least one selected from water and alcohols as a solvent. COPYRIGHT: (C)2008,JPO&INPIT
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