发明名称 |
THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE |
摘要 |
Disclosed herein is a TFT substrate which exhibits good characteristic properties despite the omission of the barrier metal layer to be normally interposed between the source-drain electrodes and the semiconductor layer in the TFT. The TFT substrate permits sure and direct connection with the semiconductor layer of the TFT. The thin film transistor substrate has a substrate, a semiconductor layer and source-drain electrodes. The source-drain electrodes are composed of oxygen-containing layers and thin films of pure copper or a copper alloy. The oxygen-containing layer contains oxygen such that part or all of oxygen combines with silicon in the semiconductor layer. And, the thin films of pure copper or a copper alloy connect with the semiconductor layer of the thin film transistor through the oxygen-containing layers.
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申请公布号 |
US2008315203(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080126527 |
申请日期 |
2008.05.23 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL LTD.) |
发明人 |
HINO AYA;GOTOU HIROSHI |
分类号 |
G02F1/1343;G02F1/1362;H01L21/28;H01L29/417;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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