SEMICONDUCTOR DEVICE, AND ELECTRONIC EQUIPMENT HAVING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a MOS transistor capable of controlling a threshold voltage easily without channel doping or micromachining to a channel region. SOLUTION: In a MOS transistor, a pn junction diode is formed by source and drain regions, and an impurity region formed adjacent to a channel region by adding an impurity element having a polarity reverse to that of the source and drain regions. For a range of impurity concentration in the impurity region, impurity addition is made within a concentration range so that the source and drain regions and the impurity region can form a pn junction diode. COPYRIGHT: (C)2009,JPO&INPIT