发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FORMING METAL THIN FILM
摘要 PROBLEM TO BE SOLVED: To improve heat resistance property while suppressing the deterioration of fluidity of an aluminum film. SOLUTION: After formation of a high purity aluminum film 15 on an insulating layer 13 with an ion beam deposition method or the like, an added element film 16 including the added element 17 is formed on the high purity aluminum film 15 and heat-processed with the ion beam deposition method. Accordingly, the added element 17 included in the added element film 16 can be diffused into the high purity aluminum film 15 and the added element 17 can be added to the high purity aluminum film 15. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004556(A) 申请公布日期 2009.01.08
申请号 JP20070163915 申请日期 2007.06.21
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 YAMASHITA MITSUO
分类号 H01L21/3205;H01L21/28;H01L21/285;H01L23/52 主分类号 H01L21/3205
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