发明名称 |
DIRECT DEPOSITION OF NICKEL SILICIDE NANOWIRE |
摘要 |
Methods for direct deposition of a metal silicide nanowire for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes positioning a substrate in a processing region of a process chamber, the substrate having a first surface comprising a non-dielectric material; and a dielectric layer formed on the first surface. An opening is formed in the dielectric layer, the opening exposing at least a portion of the first surface, the opening having sidewalls. A metal silicide seed is deposited in the opening using a PVD process, wherein the PVD process is performed with either no bias or a bias which creates deposition on the sidewall which is less than 1% of the deposition on the first surface. A metal silicide layer is then selectively deposited on the metal silicide seed using a metal-silicon organic precursor, creating the metal silicide nanowire. |
申请公布号 |
WO2016111833(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
WO2015US66870 |
申请日期 |
2015.12.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LAKSHMANAN, ANNAMALAI;MEBARKI, BENCHERKI;SINGH, KAUSHAL K.;MA, PAUL F.;NAIK, MEHUL B.;COCKBURN, ANDREW;GODET, LUDOVIC |
分类号 |
H01L21/441;H01L21/203 |
主分类号 |
H01L21/441 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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