发明名称 |
Reducing programming time of a memory cell |
摘要 |
The present invention provides methods and apparatus for adjusting voltages of bit and word lines to program a two terminal memory cell. The invention may include setting a first line connected to a memory cell to a first voltage from a first line standby voltage, charging a second line connected to the memory cell to a predetermined voltage from a second line standby voltage, and switching the first line from the first voltage to a second voltage. The voltage difference between the first voltage and the predetermined voltage is such that a safe voltage results that does not program the memory cell. A voltage difference between the second voltage and the predetermined voltage is such that a programming voltage operative to program the memory cell results.
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申请公布号 |
US8125822(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20090551548 |
申请日期 |
2009.08.31 |
申请人 |
THORP TYLER;SCHEUERLEIN ROY E.;SANDISK 3D LLC |
发明人 |
THORP TYLER;SCHEUERLEIN ROY E. |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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