发明名称 GROUP 4 METAL COMPLEX, PRODUCTION METHOD THEREOF, PREPARATION METHOD OF GROUP 4 METAL-CONTAINING THIN FILM
摘要 PROBLEM TO BE SOLVED: To provide a group 4 metal complex having excellent thermal stability and proper vapor pressure and suitable as a material for preparing a group 4 metal-containing thin film.SOLUTION: There is provided the group 4 metal complex represented by the general formula (1), where M represents a group 4 metal atom, R, R, Rand Reach represent independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, R, Rand Reach represent independently an alkyl group having 1 to 8 carbon atoms, R, Rand Reach represent independently an alkyl group having 1 to 6 carbon atoms or a di (alkyl having 1 to 3 carbon atoms) amino group.SELECTED DRAWING: None
申请公布号 JP2016147819(A) 申请公布日期 2016.08.18
申请号 JP20150024589 申请日期 2015.02.10
申请人 TOSOH CORP;SAGAMI CHEMICAL RESEARCH INSTITUTE 发明人 TADA KENICHI;MANIWA ATSUSHI;FURUKAWA YASUSHI
分类号 C07F19/00;C07F17/00;C23C16/18;H01L51/05;H01L51/30 主分类号 C07F19/00
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