| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide substrate capable of improving yield of a semiconductor device by reducing on-resistance, and to provide a semiconductor device using the substrate, and each production method of them.SOLUTION: A silicon carbide substrate (1) comprises single crystal silicon carbide, and on one principal surface (1A), sulfur atoms exist at the ratio of 60×10atoms/cmor higher and 2,000×10atoms/cmor lower, and oxygen atoms exist at the ratio of 3 at% or higher and 30 at% or lower.SELECTED DRAWING: Figure 1 |
