PROCESSING APPARATUS AND MANUFACTURE METHOD OF PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which achieves miniaturization while suppressing defects, or a semiconductor device which achieves miniaturization while maintaining good characteristics.SOLUTION: A semiconductor device includes: an insulating layer; a source electrode and a drain electrode embedded in the insulating layer; an oxide semiconductor layer in contact with part of surfaces of the insulating layer, the source electrode, and the drain electrode; a gate insulating layer covering the oxide semiconductor layer; and a gate electrode on the gate insulating layer. A region that is part of the surface of the insulating layer which is in contact with the oxide semiconductor layer has a root-mean-square (RMS) roughness of 1 nm or less. Height difference between a part of the surface of the insulating layer and the surface of the source electrode and height difference between a part of the surface of the insulating layer and the surface of the drain electrode are 5 nm or more.SELECTED DRAWING: Figure 1