| 摘要 |
PROBLEM TO BE SOLVED: To permit the growth of bulk crystals that have a practical shape, excellent crystallinity and electric properties at a practical growth rate in an industrial scale by allowing gallium nitride compound semiconductor to grow on a seed crystal of gallium nitride compound semiconductor. SOLUTION: A crucible plug on which a seed crystal of gallium nitride compound semiconductor and a boron nitride(BN) crucible including gallium are placed in a pressurized crystal growing chamber 2 inside the carbon heater 8 for the crystal grower. The high-pressure crystal-growing furnace 3 in which the pressurized crystal growth chamber 2 is evacuated to vacuum, then nitrogen is fed from a bomb 7 through the pressurizing chamber 5, a pressure feeder 6 into the pressurized crystal growing chamber 2 at a lower pressure than a prescribed one by 0.5-1×109 Pa. Then, the carbon heater is energized to heat the crucible and start growing the crystal at a lower temperature than a prescribed temperature by 100-200 deg.C, then the temperature and pressure are continuously increased and the crystal is grown at a prescribed pressure and temperature. |
