发明名称 |
Conductive bond for through-wafer interconnect |
摘要 |
A conductive bond for through-wafer interconnect is produced by forming an electrode through a first wafer from a component on a front side of the first wafer to a back side of the first wafer, forming a first electrically conductive interface in contact with an exposed portion of the electrode on the back side of the first wafer, and conductively bonding the first electrically conductive interface with a second electrically conductive interface on a second wafer under pressure at a temperature below the thermal budget of the stacked wafer device. The process temperature is generally well below the melting points of the electrically conductive interfaces. In some embodiments, the conductive bonding may be facilitated or enabled by performing the conductive bonding in a vacuum.
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申请公布号 |
US2005170609(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050050469 |
申请日期 |
2005.02.03 |
申请人 |
ALIE SUSAN A.;WACHTMANN BRUCE K.;FELTON LAWRENCE E.;YUN CHANGHAN |
发明人 |
ALIE SUSAN A.;WACHTMANN BRUCE K.;FELTON LAWRENCE E.;YUN CHANGHAN |
分类号 |
B81B7/00;(IPC1-7):H01L21/30;H01L21/46;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
B81B7/00 |
代理机构 |
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主权项 |
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