METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to simplify the manufacturing process and to reduce manufacturing costs by forming a fuse box and etching simultaneously a metal pattern on a pad region using two photoresist patterns. A fuse line pattern(111) is formed on a substrate(110) defined with a fuse region(F) and a pad region(P). An insulating layer is formed on the resultant structure. A metal pattern(117) is formed on the insulating layer to connect the fuse line pattern. A passivation layer(118) is deposited on the resultant structure. A first photoresist pattern(119a) is formed to reduce the step difference of the passivation layer. A second photoresist pattern(122) with different wavelength region is formed on the passivation layer and the first photoresist pattern. By etching the first photoresist pattern and the passivation layer of the fuse region using the second photoresist pattern, a fuse box(125) is formed at the fuse region to expose the insulating layer and the metal pattern is simultaneously etched.