| 摘要 |
A semiconductor photocathode 1 includes: a transparent substrate 11 ; a first electrode 13 , formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11 ; a window layer 14 , formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15 , formed on the window layer 14 , formed of a semiconductor material that is lattice matched to the window layer 14 , is narrower in energy band gap than the window layer 14 , and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16 , formed on the light absorbing layer 15 , formed of a semiconductor material that is lattice matched to the light absorbing layer 15 , and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18 , formed on the electron emission layer.
|
