| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a recess gate of a semiconductor element, capable of preventing damage of an active region, even if a loss of a field oxide film below a path gate and overlay misalignment occur between the active region and a recess pattern in forming the recess gate. SOLUTION: The method includes a step of forming a field oxide film 22 for defining the active region 23 on a semiconductor substrate 21; a step of forming a hard mask pattern 24A for selectively exposing at least a part of the active region 23 on the substrate 21; a step of performing etching using the hard mask pattern 24A as an etching barrier to form recess patterns 29 on the active region 23; a step of removing the hard mask pattern 24A; a step of forming a gate insulating film on the substrate 21 having the recess patterns 29 formed thereon; and a step of forming a gate electrode for covering at least the recess patterns 29 on the gate insulating film. COPYRIGHT: (C)2008,JPO&INPIT
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