Passivation of back-illuminated image sensor

摘要

A method for forming a back-illuminated image sensor includes forming a higher doped crystalline layer on a crystalline substrate, growing a lower doped crystalline layer on the higher doped crystalline layer and forming a photodiode and component circuitry from the lower doped crystalline layer. Metallization structures are formed to make connections to and between components. The crystalline substrate is removed to expose the higher doped crystalline layer. An optical component structure is provided on an exposed surface of the higher doped crystalline layer to receive light therein such that the higher doped crystalline layer provides a passivation layer for the photodiode and the component circuitry.

主权项

1. A method for forming a back-illuminated image sensor, comprising:
forming a lower doped hydrogenated crystalline layer on a crystalline substrate; forming a photodiode and component circuitry from the lower doped hydrogenated crystalline layer; forming metallization structures to make connections to and between components; removing the crystalline substrate to expose the photodiode and the component circuitry on the lower doped hydrogenated crystalline layer; epitaxially growing and patterning a higher doped hydrogenated crystalline layer, having between about five to about forty percent hydrogen, from silicon on an exposed surface of the photodiode and the component circuitry on the lower doped hydrogenated crystalline layer; and providing an optical component structure on the higher doped hydrogenated crystalline layer to receive light therein such that the higher doped hydrogenated crystalline layer provides a passivation layer for at least one of the photodiode and the component circuitry.