Wet clean process for cleaning plasma processing chamber components

摘要

A system and method of cleaning a plasma processing chamber component includes removing the component from the plasma processing chamber, the removed component including a material deposited on the surface of the component. A heated oxidizing solution is applied to the material deposited on the component to oxidize a first portion deposited material. A stripping solution is applied to the component to remove the oxidized first portion of the deposited material. An etching solution is applied to remove a second portion of the deposited material and the cleaned component can be rinsed and dried.

主权项

1. A method for cleaning a component of a plasma processing chamber comprising:
removing the component to be cleaned from the plasma processing chamber, the removed component including at least one material deposited on the component; applying a basic cleaning process to the removed component; degreasing the removed component; removing the at least one material deposited on the removed component to produce a cleaned component, the removing includes applying a heated oxidizing solution to the at least one material deposited on the removed component to oxidize a first portion of the at least one material deposited on the removed component, applying a stripping solution to the removed component to remove the oxidized first portion of the least one material from the removed component, and applying an etching solution to remove a second portion of the least one material from the removed component, the heated oxidizing solution includes a mixture of potassium hydroxide (KOH) and potassium permanganate (KMnO4) in a ratio of between about 5 parts potassium hydroxide (KOH) to about 2 parts potassium permanganate (KMnO4); and drying the cleaned component.