| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit an influence of potential variation of a semiconductor support layer and improve heat dissipation property.SOLUTION: A semiconductor device comprises a plurality of dielectric substances 32 arranged along at least one direction leaving a space between the dielectric substances 32 at a predetermined depth of a semiconductor active layer 16. A first end dielectric substance 32A arranged on an end on one side of the one direction out of the plurality of dielectric substances 32 is constructed to be electrically connected to a collector electrode 22. A second end dielectric substance 32B arranged on one end on the other side of the one direction out of the plurality of dielectric substances 32 is constructed to be electrically connected to an emitter electrode 26.SELECTED DRAWING: Figure 1 |
