发明名称 SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To manufacture a semiconductor substrate having a via hole without having a corner at an opening in a simple manufacturing method.SOLUTION: A semiconductor substrate manufacturing method includes a first step and a second step. The first step is a step of forming on a first surface T1 of a semiconductor substrate 10, a mask layer 12 having a first through hole 12A. The second step is a step of etching the semiconductor substrate 10 via the first through hole 12A of the mask layer 12 from the first surface T1 side of the semiconductor substrate 10 to form a via hole 14A in the semiconductor substrate 10. The mask layer 12 is a layer for forming the via hole 14A which forms an angle between the first surface T1 and a side wall S of the via hole 14A is larger on a second surface T2 side of the semiconductor substrate 10, which is opposite to the first surface T1 than on the first surface T1 side.SELECTED DRAWING: Figure 1
申请公布号 JP2016207991(A) 申请公布日期 2016.12.08
申请号 JP20150092152 申请日期 2015.04.28
申请人 RICOH CO LTD 发明人 SHIMOKAWA TATSUYA
分类号 H01L21/3205;H01L21/3065;H01L21/768;H01L23/522 主分类号 H01L21/3205
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